dc.contributor.author | Yılmaz, Sevil | |
dc.contributor.author | Polat, İsmail | |
dc.contributor.author | Tomakin, Murat | |
dc.contributor.author | Bacaksız, Emin | |
dc.date.accessioned | 2020-12-19T19:34:28Z | |
dc.date.available | 2020-12-19T19:34:28Z | |
dc.date.issued | 2020 | |
dc.identifier.citation | Yılmaz, S., Polat, İ., Tomakin, M. & Bacaksız, E. (2020). Transparent and conductive CdS:Ca thin films for optoelectronic applications. Applied Physics A-Materials Science & Processing, 126(7). https://doi.org/10.1007/s00339-020-03752-7 | en_US |
dc.identifier.issn | 0947-8396 | |
dc.identifier.issn | 1432-0630 | |
dc.identifier.uri | https://doi.org/10.1007/s00339-020-03752-7 | |
dc.identifier.uri | https://hdl.handle.net/11436/1097 | |
dc.description | POLAT, ISMAIL/0000-0002-5134-0246 | en_US |
dc.description | WOS: 000545722100002 | en_US |
dc.description.abstract | This paper presents the structural, morphological, optical and electrical evolution of Ca-doped CdS thin films. Non-doped and Ca-doped CdS samples with various amounts of Ca atoms (from 0 to 10 at.% with an increasing step of 2 at.%) were grown by spray pyrolysis route on glass slides. the structural investigation by X-ray diffraction showed that Ca-doping distorted CdS structure until 8 at.% Ca-doping and then a slight improvement in the intensity of (101) peak was obtained for 10 at.% Ca-doping compared to the other Ca-doping samples. Morphological analysis displayed a grain growth for a low amount of Ca-doping whereas higher concentration of Ca-doping led to a reduction in the grain size of CdS thin films. More stoichiometric CdS specimens were obtained after various amounts of Ca-doping according to energy dispersive X-ray spectroscopy data. Transparency of the CdS samples enhanced remarkably with the incorporation of Ca atoms in CdS with a particular concentration of 10 at.%. Tauc's plot investigation illustrated that the bandgap score of samples changed from 2.54 eV for non-doped CdS to 2.48 eV for 4 at.% Ca-doped CdS thin films. Further increase of Ca-doping doesn't vary the bandwidth of CdS samples. Photoluminescence data indicated that Ca-doped CdS thin films had lower intrinsic defects compared with non-doped CdS one. the electrical examination demonstrated that the carrier density of CdS thin films increased till 6 at.% Ca-doping and then decreased further increase of Ca-doping. However, resistivity values exhibited the opposite behavior accordingly. in conclusion, it can be pronounced that 6 at.% Ca-doped CdS thin films are the optimum specimen to be used as an effective transparent and conductive material in the optoelectronic devices. | en_US |
dc.description.sponsorship | Adana Alparslan Turkes Science and Technology University [19103001] | en_US |
dc.description.sponsorship | All the authors wish to thank Adana Alparslan Turkes Science and Technology University for its financial support under a project number of 19103001. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | Springer Heidelberg | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | CdS thin films | en_US |
dc.subject | Ca-doping | en_US |
dc.subject | Spray pyrolysis | en_US |
dc.subject | Optical properties | en_US |
dc.subject | Electrical properties | en_US |
dc.title | Transparent and conductive CdS:Ca thin films for optoelectronic applications | en_US |
dc.type | article | en_US |
dc.contributor.department | RTEÜ, Fen - Edebiyat Fakültesi, Fizik Bölümü | en_US |
dc.contributor.institutionauthor | Tomakin, Murat | |
dc.identifier.doi | 10.1007/s00339-020-03752-7 | |
dc.identifier.volume | 126 | en_US |
dc.identifier.issue | 7 | en_US |
dc.relation.journal | Applied Physics A-Materials Science & Processing | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |