Basit öğe kaydını göster

dc.contributor.authorBayazıt, Tuğba
dc.contributor.authorOlgar, Mehmet Ali
dc.contributor.authorKüçükömeroğlu, Tayfur
dc.contributor.authorBacaksız, Emin
dc.contributor.authorTomakin, Murat
dc.date.accessioned2020-12-19T19:36:57Z
dc.date.available2020-12-19T19:36:57Z
dc.date.issued2019
dc.identifier.citationBayazıt, T., Olgar, M.A., Küçükömeroğlu, T., Bacaksız, E. & Tomakin, M. (2019). Growth and characterization of Cu2SnS3 (CTS), Cu2SnSe3 (CTSe), and Cu2Sn(S,Se)(3) (CTSSe) thin films using dip-coated Cu-Sn precursor. Journal of Materials Science-Materials in Electronics, 30(13), 12612-12618. https://doi.org/10.1007/s10854-019-01622-4en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.urihttps://doi.org/10.1007/s10854-019-01622-4
dc.identifier.urihttps://hdl.handle.net/11436/1498
dc.descriptionKucukomeroglu, Tayfur/0000-0003-4121-9343; OLGAR, MEHMET ALI/0000-0002-6359-8316; Tomakin, Murat/0000-0003-1887-848Xen_US
dc.descriptionWOS: 000475587800080en_US
dc.description.abstractTernary compounds Cu2SnS3, Cu2SnSe3 and Cu2Sn(S,Se)(3) thin films used in thin film solar cell applications were prepared at the first time by such a two-stage process that includes dip-coating of Cu-Sn precursors as distinct from vacuum-based fabrication methods followed by sulfurization/selenization of prepared precursors via rapid thermal processing at 550 degrees C. All prepared thin films revealed Cu-poor composition. X-ray diffraction and Raman spectra of the samples showed that Cu2SnS3 and Cu2SnSe3 thin films had a monoclinic structure as a dominant phase and additionally some secondary phases such as tetragonal Cu2SnS3 and orthorhombic Cu3SnS4. However, the tetragonal and orthorhombic phases had more impact on Cu2Sn(SSe)(3) thin film. Compact, dense, and small grained surface morphologies were obtained for the Cu2SnS3 and Cu2Sn(SSe)(3) thin films, while the surface morphology of the Cu2SnSe3 thin film had larger grained surface morphology. the Cu2SnS3 thin film demonstrated higher transmittance (similar to 65%) and two different absorption edges that indicates formation of two band gap energy. Band gap values of Cu2SnS3, Cu2Sn(SSe)(3) and Cu2SnSe3 thin films were found 0.97eV (and 1.51eV), 1.25eV and 0.78eV, respectively. the lowest resistivity (2.48x10(-1)Omega cm) and the highest carrier concentration (1.64x10(19)cm(-3)) values were observed for Cu2Sn(SSe)(3) thin film.en_US
dc.description.sponsorshipRecep Tayyip Erdogan University, Rize, TurkeyRecep Tayyip Erdogan University [FDK-2018-964]en_US
dc.description.sponsorshipThis work was supported by the research fund of Recep Tayyip Erdogan University, Rize, Turkey, under Contract No. FDK-2018-964en_US
dc.language.isoengen_US
dc.publisherSpringeren_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleGrowth and characterization of Cu2SnS3 (CTS), Cu2SnSe3 (CTSe), and Cu2Sn(S,Se)(3) (CTSSe) thin films using dip-coated Cu-Sn precursoren_US
dc.typearticleen_US
dc.contributor.departmentRTEÜ, Fen - Edebiyat Fakültesi, Fizik Bölümüen_US
dc.contributor.institutionauthorBayazıt, Tuğba
dc.contributor.institutionauthorTomakin, Murat
dc.identifier.doi10.1007/s10854-019-01622-4
dc.identifier.volume30en_US
dc.identifier.issue13en_US
dc.identifier.startpage12612en_US
dc.identifier.endpage12618en_US
dc.relation.journalJournal of Materials Science-Materials in Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


Bu öğenin dosyaları:

Thumbnail

Bu öğe aşağıdaki koleksiyon(lar)da görünmektedir.

Basit öğe kaydını göster