dc.contributor.author | Gürbulak, Bekir | |
dc.contributor.author | Sata, Mehmet | |
dc.contributor.author | Doğan, Seydi | |
dc.contributor.author | Duman, Songül | |
dc.contributor.author | Ashkhasi, Afsoun | |
dc.contributor.author | Keskenler, Eyüp Fahri | |
dc.date.accessioned | 2020-12-19T20:02:56Z | |
dc.date.available | 2020-12-19T20:02:56Z | |
dc.date.issued | 2014 | |
dc.identifier.citation | Gurbulak, B., Sata, M., Dogan, S., Duman, S., Ashkhasi, A., Keskenler, E.F. (2014). Structural characterizations and optical properties of InSe and InSe: Ag semiconductors grown by Bridgman/Stockbarger technique. Physica E-Low-Dimensional Systems & Nanostructures, 64, 106-111. | en_US |
dc.identifier.issn | 1386-9477 | |
dc.identifier.issn | 1873-1759 | |
dc.identifier.uri | https://doi.org/10.1016/j.physe.2014.07.002 | |
dc.identifier.uri | https://hdl.handle.net/11436/3037 | |
dc.description | Dogan, Seydi/0000-0001-9785-4990; Duman, Songul/0000-0002-3091-3746; GURBULAK, BEKIR/0000-0002-5343-4107 | en_US |
dc.description | WOS: 000342955800018 | en_US |
dc.description.abstract | Undoped InSe and Ag doped InSe (InSe:Ag) single crystals have been grown by using the Bridgman/Stockbarger method. the freshly cleaved crystals have mirror-like surfaces even without using mechanical treatment. the structure and lattice parameters of the undoped InSe and InSe:Ag semiconductors have been analyzed using a X-ray diffractometer (XRD), Scanning electron microscopy (SEM) and energy dispersive X-rays (EDX) techniques. It is found that the InSe and InSe:Ag crystals had hexagonal structure, and calculated lattice constants were found to be a=4.002 angstrom and c=17.160 angstrom for InSe and a=4.619 angstrom and c=17.003 angstrom for InSe:Ag. the crystallite sizes have been calculated to be 40-150 nm for InSe and 75-120 nm for InSe:Ag from the SEM results. Ag doping causes a significant increase in the XRD peak intensity. It has been observed from EDX results that InSe contains In=57.12%, Se=38.08% and O=4.81%, respectively. Absorption measurements have been carried out in InSe and InSe:Ag samples in the temperature range 10-320 K with a step of 10 K. the first exciton energies for n=1 were calculated as 1.328, 1.260 eV in InSe and were 1.340, 1.282 eV in InSe:Ag at 10 K and 320 K, respectively. (C) 2014 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | Ataturk University Research FundAtaturk University [2012/458, 2012/461, 2013/286, 2013/311] | en_US |
dc.description.sponsorship | This work was supported by the Ataturk University Research Fund, Project no: 2012/458, 2012/461, 2013/286, 2013/311. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | Elsevier | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | InSe | en_US |
dc.subject | InSe:Ag | en_US |
dc.subject | Single crystals | en_US |
dc.subject | First exciton energy | en_US |
dc.subject | Structural analysis | en_US |
dc.title | Structural characterizations and optical properties of InSe and InSe: Ag semiconductors grown by Bridgman/Stockbarger technique | en_US |
dc.type | article | en_US |
dc.contributor.department | RTEÜ, Mühendislik ve Mimarlık Fakültesi, Elektrik-Elektronik Mühendisliği Bölümü | en_US |
dc.contributor.institutionauthor | Keskenler, Eyüp Fahri | |
dc.identifier.doi | 10.1016/j.physe.2014.07.002 | |
dc.identifier.volume | 64 | en_US |
dc.identifier.startpage | 106 | en_US |
dc.identifier.endpage | 111 | en_US |
dc.relation.journal | Physica E-Low-Dimensional Systems & Nanostructures | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |