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dc.contributor.authorÇiriş, Ali
dc.contributor.authorBaşol, Bülent M.
dc.contributor.authorYılmaz, Sevil Savaşkan
dc.contributor.authorAtasoy, Yavuz
dc.contributor.authorTomakin, Murat
dc.contributor.authorKüçükömeroğlu, Tayfur
dc.contributor.authorBacaksız, Emin
dc.date.accessioned2020-12-19T19:40:36Z
dc.date.available2020-12-19T19:40:36Z
dc.date.issued2019
dc.identifier.citationÇiriş, A., Başol, B.M., Yılmaz, S., Atasoy, Y., Tomakin, M., Küçükömeroğlu, T. & Bacaksız, E. (2019). Alloying and phase transformation in CdS/CdSe bilayers annealed with or without CdCl2. Materials Science in Semiconductor Processing, 91, 90-96. https://doi.org/10.1016/j.mssp.2018.11.009en_US
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2018.11.009
dc.identifier.urihttps://hdl.handle.net/11436/1588
dc.descriptionWOS: 000454537700013en_US
dc.description.abstractThe present paper studies the structural, compositional, morphological and optical properties of thin CdS/CdSe stacks annealed in an inert atmosphere or subjected to a CdCl2 treatment. the bilayer stacks were fabricated by chemical bath deposition (CBD) of a 50 nm thick CdS layer followed by evaporation of a CdSe film with equal thickness. It was found that when this stack was annealed at 400 degrees C for up to 10 min, no appreciable intermixing/alloying between the two layers was detected. Upon heating for 5-10 min in presence of a CdCl2 layer disposed over the CdSe film, however, led to appreciable alloying and formation of CdSSe, which was confirmed through XRD, optical transmission and room temperature photoluminescence measurements. XRD data further showed that the CdS layer in the CdS/CdSe stack had nano-amorphous structure that did not change upon annealing in inert atmosphere. the CdSe layer of the stack, which had a cubic structure, also preserved its phase upon annealing in inert atmosphere. When the CdS/CdSe stack was CdCl2 treated, the phase of the CdSSe alloy formed was transformed to hexagonal. These observations may have consequences in applications where CdS/CdSe bilayers are formed within device structures and subjected to various types of heat treatments.en_US
dc.description.sponsorshipScientific and Technological Research Council of Turkey (TUBITAK)Turkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [118F140]en_US
dc.description.sponsorshipThis work is financially supported by the Scientific and Technological Research Council of Turkey (TUBITAK) (Project number: 118F140) in Turkey.en_US
dc.language.isoengen_US
dc.publisherElsevier Sci Ltden_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCdS/CdSe bilayeren_US
dc.subjectAnnealingen_US
dc.subjectCdCl2 treatmenten_US
dc.subjectPhase transitionen_US
dc.subjectOptical propertiesen_US
dc.titleAlloying and phase transformation in CdS/CdSe bilayers annealed with or without CdCl2en_US
dc.typearticleen_US
dc.contributor.departmentRTEÜ, Fen - Edebiyat Fakültesi, Fizik Bölümüen_US
dc.contributor.institutionauthorTomakin, Murat
dc.identifier.doi10.1016/j.mssp.2018.11.009
dc.identifier.volume91en_US
dc.identifier.startpage90en_US
dc.identifier.endpage96en_US
dc.relation.journalMaterials Science in Semiconductor Processingen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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