Strain-engineered SiGe nanomembrane quantum-well infrared photodetectors

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info:eu-repo/semantics/closedAccess

Date

2017

Author

Durmaz, Habibe
Sookchoo, Pornsatit
Cui, X.
Jacobson, Ronald B.
Savage, Donald E.
Lagally, M. G.
Paiella, Roberto

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Citation

Durmaz, H., Sookchoo, P., Cui, X., Jacobson, R. B., Savage, D. E., Lagally, M. G. & Paiella, R. (2017). Strain-Engineered SiGe Nanomembrane Quantum-Well Infrared Photodetectors. 2017 Conference on Lasers and Electro-Optics (Cleo), 2017.

Abstract

SiGe quantum-well nanomembranes, where stress from lattice mismatch is relaxed via elastic strain sharing rather than defect formation, are used to develop intersubband photodetectors showing improved performance compared to identical devices grown on rigid substrates.

Source

2017 Conference on Lasers and Electro-Optics (Cleo)

URI

https://hdl.handle.net/11436/2212

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