GaN terahertz photodetectors for the reststrahlen Gap of intersubband optoelectronics

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info:eu-repo/semantics/openAccess

Date

2017

Author

Durmaz Sağır, Habibe
Nothern, Denis
Brummer, Gordie
Moustakas, Theodore D.
Paiella, Roberto

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Citation

Durmaz, H., Nothern, D., Brummer, G., Moustakas, T.D. & Paiella, R. (2017). GaN Terahertz Photodetectors for the Reststrahlen Gap of Intersubband Optoelectronics. 2017 Conference on Lasers and Electro-Optics (Cleo). http://doi.org/10.1364/CLEO_SI.2017.SM4J.7

Abstract

Terahertz intersubband photodetectors are developed based on GaN/AlGaN quantum wells grown on a semi-polar GaN substrate, covering the frequency range that is fundamentally inaccessible to existing III-V semiconductor devices due to Reststrahlen absorption.

Source

2017 Conference on Lasers and Electro-Optics (Cleo)

URI

https://hdl.handle.net/11436/2213
http://doi.org/10.1364/CLEO_SI.2017.SM4J.7

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