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dc.contributor.authorŞahin, M.
dc.contributor.authorYavuz, S.
dc.date.accessioned2020-12-19T20:13:25Z
dc.date.available2020-12-19T20:13:25Z
dc.date.issued2014
dc.identifier.citationŞahin, M. & Yavuz, S. (2014). The effect of external electric field on mass attenuation coefficients of some semiconductor. Radiation Effects and Defects in Solids, 169(12), 1064-1069. https://doi.org/10.1080/10420150.2014.988622en_US
dc.identifier.issn1042-0150
dc.identifier.urihttps://doi.org/10.1080/10420150.2014.988622
dc.identifier.urihttps://hdl.handle.net/11436/4019
dc.description.abstractIn this study, we measured the mass attenuation coefficient of n-type GaAs, p-type GaAs, n-type Si and Au/n-Si/n+Si/Al samples with and without external electric field. Samples were set in perpendicular direction to the 100mCi 241Am radioactive source and counts were made with a NaI(Tl) detector. It was observed that when an external electric field was applied onto the samples, mass attenuation coefficients were increased. Results showed that this study is consistent with previous studies. © 2014 Taylor & Francis.en_US
dc.language.isoengen_US
dc.publisherTaylor and Francis Inc.en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCross-sectionen_US
dc.subjectElectric fielden_US
dc.subjectMass attenuation coefficienten_US
dc.subjectSemiconductorsen_US
dc.titleThe effect of external electric field on mass attenuation coefficients of some semiconductoren_US
dc.typearticleen_US
dc.contributor.departmentRTEÜ, Fen - Edebiyat Fakültesi, Fizik Bölümüen_US
dc.contributor.institutionauthorŞahin, M.
dc.contributor.institutionauthorYavuz, S.
dc.identifier.doi10.1080/10420150.2014.988622
dc.identifier.volume169en_US
dc.identifier.issue12en_US
dc.identifier.startpage1064en_US
dc.identifier.endpage1069en_US
dc.relation.journalRadiation Effects and Defects in Solidsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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