dc.contributor.author | Tomakin, Murat | |
dc.contributor.author | Altunbaş, M. | |
dc.contributor.author | Bacaksız, Emin | |
dc.contributor.author | Çelik, Ş. | |
dc.date.accessioned | 2020-12-19T20:16:48Z | |
dc.date.available | 2020-12-19T20:16:48Z | |
dc.date.issued | 2012 | |
dc.identifier.citation | Tomakin, M., Altunbaş, M., Bacaksız, E. & Çelik, Ş. (2012). Current transport mechanism in CdS thin films prepared by vacuum evaporation method at substrate temperatures below room temperature. Thin Solid Films, 520(7), 2532-2536. https://doi.org/10.1016/j.tsf.2011.10.160 | en_US |
dc.identifier.issn | 0040-6090 | |
dc.identifier.uri | https://doi.org/10.1016/j.tsf.2011.10.160 | |
dc.identifier.uri | https://hdl.handle.net/11436/4272 | |
dc.description.abstract | CdS thin films were deposited by vacuum deposition method at low substrate temperatures instead of the commonly used vacuum deposition at high substrate temperatures (T S > 300 K). The effect of low substrate temperature on the current transport mechanisms in polycrystalline CdS thin films has been studied as a function of temperature over the temperature range 100-300 K. Both thermally assisted tunneling of carriers through and thermionic emission over the grain boundary potential have contributions to the conduction in the range 250-300 K for the sample prepared at 300 K substrate temperature. The dominant conduction mechanism of the samples prepared at 200 K and 100 K is determined as thermionic emission over 200 K and Mott's hopping process below 200 K. The Mott's hopping process is not applicable for the sample prepared at 300 K. © 2011 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | Elsevier | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | CdS | en_US |
dc.subject | Electrical properties and measurements | en_US |
dc.subject | Thin films | en_US |
dc.subject | Vacuum evaporation | en_US |
dc.subject | X-ray diffraction | en_US |
dc.title | Current transport mechanism in CdS thin films prepared by vacuum evaporation method at substrate temperatures below room temperature | en_US |
dc.type | article | en_US |
dc.contributor.department | RTEÜ, Fen - Edebiyat Fakültesi, Fizik Bölümü | en_US |
dc.contributor.institutionauthor | Tomakin, Murat | |
dc.contributor.institutionauthor | Çelik, Ş. | |
dc.identifier.doi | 10.1016/j.tsf.2011.10.160 | |
dc.identifier.volume | 520 | en_US |
dc.identifier.issue | 7 | en_US |
dc.identifier.startpage | 2532 | en_US |
dc.identifier.endpage | 2536 | en_US |
dc.relation.journal | Thin Solid Films | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |