dc.contributor.author | Tomakin, Murat | |
dc.contributor.author | Altunbaş, M. | |
dc.contributor.author | Bacaksz, Emin | |
dc.date.accessioned | 2020-12-19T20:10:50Z | |
dc.date.available | 2020-12-19T20:10:50Z | |
dc.date.issued | 2011 | |
dc.identifier.citation | Tomakin, M., Altunbaş, M. & Bacaksız, E. (2011). The influence of substrate temperature on electrical properties of Cu/CdS/SnO2 Schottky diode. Physica B: Condensed Matter, 406(23), 4355-4360. https://doi.org/10.1016/j.physb.2011.08.067 | en_US |
dc.identifier.issn | 0921-4526 | |
dc.identifier.uri | https://doi.org/10.1016/j.physb.2011.08.067 | |
dc.identifier.uri | https://hdl.handle.net/11436/3580 | |
dc.description.abstract | Polycrystalline CdS samples on the SnO2 coated glass substrate were obtained by vacuum evaporation method at low substrate temperatures (T S=200 and 300 K) instead of the commonly used vacuum evaporation at high substrate temperatures (TS>300 K). X-ray diffraction studies showed that the textures of the films are hexagonal with a strong (0 0 2) preferred direction. Circular Cu contacts were deposited on the upper surface of the CdS thin films at 200 K by vacuum evaporation. The effects of low substrate temperature on the currentvoltage (IV) characteristics of the Cu/CdS/SnO 2 structure were investigated in the temperature range 100300 K. The Cu/CdS (at 300 K)/SnO2 structure shows exponential currentvoltage variations. However, IV characteristics of the Cu/CdS (at 200 K)/SnO2 structure deviate from exponential behavior due to high series resistance. The diodes show non-ideal IV behavior with an ideality factor greater than unity. The results indicate that the current transport mechanism in the Cu/CdS (at 300 K)/SnO2 structure in the whole temperature range is performed by tunneling with E00=143 meV. However, the current transport mechanism in the Cu/CdS (at 200 K)/SnO2 structure is tunneling in the range 200300 K with E00=82 meV. © 2011 Elsevier B.V. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | Elsevier | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | CdS | en_US |
dc.subject | Schottky diode | en_US |
dc.subject | Thin film | en_US |
dc.subject | Vacuum evaporation | en_US |
dc.title | The influence of substrate temperature on electrical properties of Cu/CdS/SnO2 Schottky diode | en_US |
dc.type | article | en_US |
dc.contributor.department | RTEÜ, Fen - Edebiyat Fakültesi, Fizik Bölümü | en_US |
dc.contributor.institutionauthor | Tomakin, Murat | |
dc.identifier.doi | 10.1016/j.physb.2011.08.067 | |
dc.identifier.volume | 406 | en_US |
dc.identifier.issue | 23 | en_US |
dc.identifier.startpage | 4355 | en_US |
dc.identifier.endpage | 4360 | en_US |
dc.relation.journal | Physica B: Condensed Matter | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |