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dc.contributor.authorBacaksız, Emin
dc.contributor.authorAksu, S.
dc.contributor.authorOzer, N.
dc.contributor.authorTomakin, Murat
dc.contributor.authorÖzçelik, A.
dc.date.accessioned2020-12-19T20:12:01Z
dc.date.available2020-12-19T20:12:01Z
dc.date.issued2009
dc.identifier.citationBacaksız, E., Aksu, S., Özer, N., Tomakin, M. & Özçelik, A. (2009). The influence of substrate temperature on the morphology, optical and electrical properties of thermal-evaporated ZnTe Thin Films. Applied Surface Science, 256(5), 1566-1572. https://doi.org/10.1016/j.apsusc.2009.09.023en_US
dc.identifier.issn0169-4332
dc.identifier.urihttps://doi.org/10.1016/j.apsusc.2009.09.023
dc.identifier.urihttps://hdl.handle.net/11436/3819
dc.description.abstractThe structural, morphological, optical and electrical properties of ZnTe films deposited by evaporation were investigated as a function of substrate temperature (at -123 and 27 °C) and post-deposition annealing temperature (at 200, 300 and 400 °C). It was determined that films deposited at both substrate temperatures were polycrystalline in nature with zinc-blende structure and a strong (1 1 1) texture. A small Te peak was detected in XRD spectra for both substrate temperatures, indicating that as-deposited ZnTe films were slightly rich in Te. Larger grains and a tighter grain size distribution were obtained with increased substrate temperature. Scanning electron microscopy (SEM) studies showed that the microstructures of the as-deposited films agreed well with the expectations from structure zone model. Post-deposition annealing induced further grain growth and tightened the grain size distribution. Annealing at 400 °C resulted in randomization in the texture of films deposited at both substrate temperatures. Optical spectroscopy results of the films indicated that the optical band gap value increased from 2.13 to 2.16 eV with increased substrate temperature. Increasing the annealing temperature sharpened the band-edge. Resistivity measurements showed that the resistivity of films deposited at substrate temperatures of -123 and 27 °C were 32 ? cm, and 1.0 × 10 4 ? cm, respectively with corresponding carrier concentrations of 8.9 × 10 15 cm -3 and 1.5 × 10 14 cm -3 . Annealing caused opposite changes in the film resistivity between the samples prepared at substrate temperatures of -123 and 27 °C. © 2009 Elsevier B.V. All rights reserved.en_US
dc.language.isoengen_US
dc.publisherElsevieren_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAnnealing temperatureen_US
dc.subjectElectrical resistivityen_US
dc.subjectMicrostructureen_US
dc.subjectOptical band gapen_US
dc.subjectSubstrate temperatureen_US
dc.subjectVacuum evaporationen_US
dc.subjectZnTe thin filmsen_US
dc.titleThe influence of substrate temperature on the morphology, optical and electrical properties of thermal-evaporated ZnTe Thin Filmsen_US
dc.typearticleen_US
dc.contributor.departmentRTEÜ, Fen - Edebiyat Fakültesi, Fizik Bölümüen_US
dc.contributor.institutionauthorTomakin, Murat
dc.contributor.institutionauthorÖzçelik, A.
dc.identifier.doi10.1016/j.apsusc.2009.09.023
dc.identifier.volume256en_US
dc.identifier.issue5en_US
dc.identifier.startpage1566en_US
dc.identifier.endpage1572en_US
dc.relation.journalApplied Surface Scienceen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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