dc.contributor.author | Yılmaz, S. | |
dc.contributor.author | Doğan, V. | |
dc.contributor.author | Tomakin, Murat | |
dc.contributor.author | Töreli, S.B. | |
dc.contributor.author | Polat, İ. | |
dc.contributor.author | Bacaksız, Emin | |
dc.date.accessioned | 2024-05-07T10:59:49Z | |
dc.date.available | 2024-05-07T10:59:49Z | |
dc.date.issued | 2024 | en_US |
dc.identifier.citation | Yılmaz, S., Doğan, V., Tomakin, M., Töreli, S.B., Polat, I. & Bacaksız, E. (2024). Introduction of Co atoms into CdS thin films for improving photovoltaic properties. Materials Today Communications, 39, 108805. https://doi.org/10.1016/j.mtcomm.2024.108805 | en_US |
dc.identifier.issn | 2352-4928 | |
dc.identifier.uri | https://doi.org/10.1016/j.mtcomm.2024.108805 | |
dc.identifier.uri | https://hdl.handle.net/11436/8984 | |
dc.description.abstract | This paper represents a systematic work on the fabrication of chemical bath-grown CdS films with and without Co atoms and their photovoltaic performances in hybrid solar cells. Structural properties showed 1% Co-doping promoted crystal quality of CdS films. However, a poor crystal quality was developed above 3% Co concentrations. A reduction in sphere size of CdS samples was observed for 1% Co-doping which was ascribed to slow growth of film. Optical examination demonstrated CdS films with 1% Co-doping displayed the highest transparency of 85% in the visible and near-infrared regions, which were explained by the improvement of crystal quality. A maximum band gap of 2.43 eV was found for 1% Co-doped CdS films, whereas an increase in Co concentration to 7% led to a decline in the band gap of CdS that was attributed to sp-d exchange interaction. Photoluminescence data showed Co-doped CdS films had lower PL peak intensity than that of CdS, demonstrating a decrease in the number of intrinsic defects. Photovoltaic measurements displayed that the best efficiency of 0.488% was achieved for CdS-based device including 1% Co atoms, which were almost a seven-fold boost in overall efficiency compared to bare CdS-based device. The enhancement in power conversion efficiency originated from an increase in short-circuit current density of 1% Co-doped CdS-based photovoltaic cell. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | Elsevier | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | Co-doped CdS thin films | en_US |
dc.subject | Hybrid solar cell | en_US |
dc.subject | Optical properties | en_US |
dc.subject | P3HT:PCBM | en_US |
dc.subject | Physical investigation | en_US |
dc.title | Introduction of Co atoms into CdS thin films for improving photovoltaic properties | en_US |
dc.type | article | en_US |
dc.contributor.department | RTEÜ, Fen - Edebiyat Fakültesi, Fizik Bölümü | en_US |
dc.contributor.institutionauthor | Tomakin, Murat | |
dc.identifier.doi | 10.1016/j.mtcomm.2024.108805 | en_US |
dc.identifier.volume | 39 | en_US |
dc.identifier.startpage | 108805 | en_US |
dc.relation.journal | Materials Today Communications | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |