dc.contributor.author | Yılmaz, Sevil Savaşkan | |
dc.contributor.author | Atasoy, Yıldız | |
dc.contributor.author | Tomakin, Murat | |
dc.contributor.author | Bacaksız, Emin | |
dc.date.accessioned | 2020-12-19T19:56:24Z | |
dc.date.available | 2020-12-19T19:56:24Z | |
dc.date.issued | 2015 | |
dc.identifier.citation | Yilmaz, S., Atasoy, Y., Tomakin, M., Bacaksiz, E. (2015). Comparative studies of CdS, CdS:Al, CdS:Na and CdS:(Al-Na) thin films prepared by spray pyrolysis. Superlattices and Microstructures, 88, 299-307. https://doi.org/10.1016/j.spmi.2015.09.021 | en_US |
dc.identifier.issn | 0749-6036 | |
dc.identifier.uri | https://doi.org/10.1016/j.spmi.2015.09.021 | |
dc.identifier.uri | https://hdl.handle.net/11436/2725 | |
dc.description | Yilmaz, Salih/0000-0002-3006-4473 | en_US |
dc.description | WOS: 000367276600036 | en_US |
dc.description.abstract | In the present study, the spray pyrolysis technique was used to prepare pure CdS, 4 at.% Al-doped CdS, 4 at.% Na-doped CdS and (4 at.% Al, 4 at.% Na)-co-doped CdS thin films. It was found from X-ray diffraction data that all the specimens showed hexagonal wurtzite structure with the preferred orientation of (101). Scanning electron microscopy results indicated that 4 at.% Al-doping caused a grain growth in the morphology of CdS thin films whereas the 4 at.% Na-doping and (4 at.% Al, 4 at.% Na)-co-doping led to porous structure with small grains. the band gap value of CdS thin films increased to 2.42 eV after 4 at.% Al-doping. However, it reduced to 2.30 eV and 2.08 eV for 4 at.% Na-doping and (4 at.% Al, 4 at.% Na)-co-doping, respectively. the room temperature photoluminescence measurements illustrated that the peak intensity of CdS thin films enhanced with 4 at.% Al-doping while 4 at.% Na-doping and (4 at.% Al, 4 at.% Na)-co-doping caused a decline in the intensity. the maximum carrier concentration and minimum resistivity were obtained for 4 at.% Al-doped CdS thin films, which is associated with the grain growth. Furthermore, (4 at.% Al, 4 at.% Na)-co-doping gave rise to a slight reduction in the carrier concentration and a slight increment in the resistivity. As a result, it can be said that 4 at.% Al-doped CdS thin films exhibited the best electrical and optical properties, which is important for the optoelectronic applications. (C) 2015 Elsevier Ltd. All rights reserved. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | Academic Press Ltd- Elsevier Science Ltd | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | CdS | en_US |
dc.subject | Thin films | en_US |
dc.subject | Co-doping of (Al and Na) | en_US |
dc.subject | PL | en_US |
dc.subject | Electrical properties | en_US |
dc.title | Comparative studies of CdS, CdS:Al, CdS:Na and CdS:(Al-Na) thin films prepared by spray pyrolysis | en_US |
dc.type | article | en_US |
dc.contributor.department | RTEÜ, Fen - Edebiyat Fakültesi, Fizik Bölümü | en_US |
dc.contributor.institutionauthor | Tomakin, Murat | |
dc.identifier.doi | 10.1016/j.spmi.2015.09.021 | |
dc.identifier.volume | 88 | en_US |
dc.identifier.startpage | 299 | en_US |
dc.identifier.endpage | 307 | en_US |
dc.relation.journal | Superlattices and Microstructures | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |