dc.contributor.author | Turgut, Güven | |
dc.contributor.author | Duman, Songül | |
dc.contributor.author | Keskenler, Eyüp Fahri | |
dc.date.accessioned | 2020-12-19T19:56:36Z | |
dc.date.available | 2020-12-19T19:56:36Z | |
dc.date.issued | 2015 | |
dc.identifier.citation | Turgut, G., Duman, S., Keskenler, E.F. (2015). The influence of Y contribution on crystallographic, topographic and optical properties of ZnO: A heterojunction diode application. Superlattices and Microstructures, 86, 363-371. https://doi.org/10.1016/j.spmi.2015.08.002 | en_US |
dc.identifier.issn | 0749-6036 | |
dc.identifier.uri | https://doi.org/10.1016/j.spmi.2015.08.002 | |
dc.identifier.uri | https://hdl.handle.net/11436/2756 | |
dc.description | Turgut, Guven/0000-0002-5724-516X; Duman, Songul/0000-0002-3091-3746 | en_US |
dc.description | WOS: 000362603100043 | en_US |
dc.description.abstract | Pure and yttrium (Y) doped ZnO samples were fabricated on micro slide glasses and p-Si wafers for device application via a simple and cheap sol-gel route using a spin coater. the characterization results of XRD, SEM and UV/VIS spectrophotometer revealed the films to have nano-sized ZnO hexagonal wurtzite structures with (002) preferential orientation and optical band gap values depending on Y doping ratio. the optical band of 3.285 eV for pure ZnO initially increased to 3.305 eV, 3.332 eV and 3.341 eV for 1 at.%, 2 at.% and 3 at.% Y incorporated ZnO films and then decreased to 3.271 eV and 3.258 eV for 5 at.% and 7 at.% Y contents. the electrical features of Al/ZnO:Y/p-Si/Al heterojunction structures were tested by I-V measurements. the heterojunction structures showed a rectifying behavior under dark condition. the Phi(b), and n values for the devices were identified by using I-V measurements. It was observed that the rectification ratio value of 3 x 10(4) calculated at +3.0 V for Al/ZnO:Y/p-Si (5 at.% Y doped ZnO) heterojunction structure was higher than most of n-ZnO/p-Si heterojunction devices reported in the literature. (C) 2015 Elsevier Ltd. All rights reserved. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | Academic Press Ltd- Elsevier Science Ltd | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | ZnO | en_US |
dc.subject | Y doping | en_US |
dc.subject | Heterojunction | en_US |
dc.subject | Sol-gel spin coating | en_US |
dc.title | The influence of Y contribution on crystallographic, topographic and optical properties of ZnO: A heterojunction diode application | en_US |
dc.type | article | en_US |
dc.contributor.department | RTEÜ, Mühendislik ve Mimarlık Fakültesi, Elektrik-Elektronik Mühendisliği Bölümü | en_US |
dc.contributor.institutionauthor | Keskenler, Eyüp Fahri | |
dc.identifier.doi | 10.1016/j.spmi.2015.08.002 | |
dc.identifier.volume | 86 | en_US |
dc.identifier.startpage | 363 | en_US |
dc.identifier.endpage | 371 | en_US |
dc.relation.journal | Superlattices and Microstructures | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |