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dc.contributor.authorPolat, İsmail
dc.contributor.authorYılmaz, Sevil Savaşkan
dc.contributor.authorBacaksız, Emin
dc.contributor.authorAtasoy, Yıldız
dc.contributor.authorTomakin, Murat
dc.date.accessioned2020-12-19T20:03:00Z
dc.date.available2020-12-19T20:03:00Z
dc.date.issued2014
dc.identifier.citationPolat, I., Yilmaz, S., Bacaksiz, E., Atasoy, Y., Tomakin, M. (2014). Erratum to: Synthesis and fabrication of Mg-doped ZnO-based dye-sensitized solar cells(J Mater Sci: Mater Electron, (2014), 25, 3173-3178, DOI 10.1007/s10854-014-2000-5). Journal of Materials Science-Materials in Electronics, 25(10), 4673. https://doi.org/10.1007/s10854-014-2160-3en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.urihttps://doi.org/10.1007/s10854-014-2160-3
dc.identifier.urihttps://hdl.handle.net/11436/3054
dc.descriptionWOS: 000342157500070en_US
dc.description.abstractAbstract Undoped and 2, 4 and 6 at.% Mg-doped ZnO nanorods were successfully deposited on ZnO seeded fluorine tin oxide substrates by a simple chemical bath deposition technique to form a photoanode. It was seen that all the samples had a hexagonal wurtzite structure with compact rod morphology. From Tauc’s plot results, as compared to the undoped one (3.26 eV), the optical band gap of the ZnO:Mg samples increased to 3.32 eV for 4 at.% Mg-doping concentration and then decreased to 3.27 eV for 6 at.% Mg-doping. Photoluminescence results measured at 300 K indicated that ZnO nanorods had a ultra-violet peak with a wavelength of 382 nm, a blue peak at 420 nm and a deep level band in the range of 450–800 nm. Undoped and Mg-doped ZnO nanorods were subsequently used to realize ZnO-based dye-synthesized solar cells which exhibited the best power conversion efficiency of 0.144 % for 4 at.% ZnO:Mg sample.en_US
dc.language.isoengen_US
dc.publisherSpringeren_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleErratum to: Synthesis and fabrication of Mg-doped ZnO-based dye-sensitized solar cells(J Mater Sci: Mater Electron, (2014), 25, 3173-3178, DOI 10.1007/s10854-014-2000-5)en_US
dc.typearticleen_US
dc.contributor.departmentRTEÜ, Fen - Edebiyat Fakültesi, Fizik Bölümüen_US
dc.contributor.institutionauthorTomakin, Murat
dc.identifier.doi10.1007/s10854-014-2000-5
dc.identifier.volume25en_US
dc.identifier.issue10en_US
dc.identifier.startpage4673en_US
dc.identifier.endpage4673en_US
dc.ri.editoaen_US
dc.relation.journalJournal of Materials Science-Materials in Electronicsen_US
dc.relation.publicationcategoryDiğeren_US


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