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Toplam kayıt 45, listelenen: 31-40
Characterization of Cu(In,Ga)(Te,S)(2) thin films grown on stainless steel foil substratesIo
(IOP Publishing, 2023)
In this study, Cu(In,Ga)(Te,S)(2) (CIGTS) thin films with [Ga]/([In] +/- [Ga]) atomic ratios in the ranges of 0.22-0.28 and 0.50-0.67 were fabricated using a two-stage technique. During the first stage of the technique, ...
Photodetector properties of CdSe thin films grown by close space sublimation method
(Springer, 2023)
In the present study, CdSe thin films were grown by Close Space Sublimation (CSS) method on glass substrates at elevated temperatures. The prepared films were analyzed through several characterization techniques such as ...
Ag diffusion in ZnS thin films prepared by spray pyrolysis
(Elsevier, 2007)
ZnS thin films were deposited by spray pyrolysis method on glass substrates. Diffusion of Ag in ZnS thin films was performed in the temperature range 80-400 °C under a nitrogen atmosphere. The diffusion of Ag is determined ...
The influence of substrate temperature on the morphology, optical and electrical properties of thermal-evaporated ZnTe Thin Films
(Elsevier, 2009)
The structural, morphological, optical and electrical properties of ZnTe films deposited by evaporation were investigated as a function of substrate temperature (at -123 and 27 °C) and post-deposition annealing temperature ...
Impact of CdSeTe and CdSe film deposition parameter on the properties of CdSeTe/CdTe absorber structure for solar cell applications
(Institute of Physics, 2024)
In this study, the effect of depositing CdSeTe and CdTe layers at different substrate temperatures (STs) by evaporation in vacuum on the properties of the CdSeTe/CdTe stacks was investigated. First, CdSeTe layers in stack ...
Performance assessment of oxygenated CdS films-based photodetector
(Elsevier, 2024)
dS films were grown by thermal evaporation on glass substrates. After growth process, samples were oxygenated at 400 °C at various gas pressures for 5 mins employing rapid thermal process. The produced CdS films were used ...
An investigation on CdSeTe/CdTe stacks deposited by evaporation: Impact of Halide treatment depending on the applied surface
(Wiley, 2024)
Among the methods applied to modify the characteristics of CdSeTe/CdTe stacks, one of the most well-known and widely used procedures is the CdCl2 halide treatment. In this connection, the influence of CdCl2 on microstructural ...
Effect of CdCl2/annealing on the crystalline transformation of CdTe thin films grown by evaporation at a low substrate temperature
(TÜBİTAK, 2011)
The structural and optical properties of CdTe thin films prepared at a low substrate temperature were investigated before and after the CdCl 2/annealing. The crystal structure of CdTe film was cubic with a strong (111) ...
Current transport mechanism in CdS thin films prepared by vacuum evaporation method at substrate temperatures below room temperature
(Elsevier, 2012)
CdS thin films were deposited by vacuum deposition method at low substrate temperatures instead of the commonly used vacuum deposition at high substrate temperatures (T S > 300 K). The effect of low substrate temperature ...
Growth and characterization of CT(S,Se) thin films and Al/n-Si/p-CT(S,Se)/Mo heterojunction diode application employing a two-stage process
(Elsevier, 2023)
Cu2SnS3 (CTS), Cu2Sn(S,Se)3 (CTSSe), and Cu2SnSe3 (CTSe) thin films were deposited on n-type silicon wafer substrates using a two-stage process. This process involved drop-coating Cu-Sn precursors, which is different from ...