Optical and electrical properties of SiC/p-Si heterojunction

Abstract

In this study, SiC was used to manufacture Al/SiC/p-Si/Al heterojunction structure by thermal evaporation method. X-ray diffractometry (XRD) and field emission scanning electron microscope (FE-SEM) analyses were evaluated for the characterization of semiconductor SiC layers. For the electrical characterization of the heterojunction, current-voltage (I-V), capacitance-voltage (C-V), and conductance-voltage (G-V) parameters were measured at room temperature (RT) and under various illumination conditions. Ideality factor (n) and barrier height (Фb) values were calculated as 1.32 and 0.85 eV in the dark and 1.22 and 0.77 eV at 100 mW/cm2 illumination at RT, respectively. The results provide information indicating that Al/SiC/p-Si/Al heterojunction structure is promising for photovoltaic devices.