dc.contributor.author | Yılmaz, Salih | |
dc.contributor.author | Toreli, S. B. | |
dc.contributor.author | Polat, İsmail | |
dc.contributor.author | Olgar, M. A. | |
dc.contributor.author | Tomakin, Murat | |
dc.contributor.author | Bacaksız, Emin | |
dc.date.accessioned | 2020-12-19T19:48:48Z | |
dc.date.available | 2020-12-19T19:48:48Z | |
dc.date.issued | 2017 | |
dc.identifier.citation | Yılmaz, S., Toreli, S.B., Polat, İ., Olgar, M.A., Tomakin, M. & Bacaksız, E. (2017). Enhancement in the optical and electrical properties of CdS thin films through Ga and K co-doping. Materials Science in Semiconductor Processing, 60, 45-52. https://doi.org/10.1016/j.mssp.2016.12.016 | en_US |
dc.identifier.issn | 1369-8001 | |
dc.identifier.issn | 1873-4081 | |
dc.identifier.uri | https://doi.org/10.1016/j.mssp.2016.12.016 | |
dc.identifier.uri | https://hdl.handle.net/11436/2167 | |
dc.description | Olgar, Mehmet Ali/0000-0002-6359-8316; Yilmaz, Salih/0000-0002-3006-4473; POLAT, ISMAIL/0000-0002-5134-0246 | en_US |
dc.description | WOS: 000393258500007 | en_US |
dc.description.abstract | In the presented work, Ga-doped CdS and (Ga-K)-co-doped CdS thin films are grown on glass substrates at a temperature of 400 degrees C through spray pyrolysis. Influence of K-doping on structural, morphological, optical and electrical characteristics of CdS:Ga thin films are examined. K level is changed from 1 at% to 5 at% for CdS:Ga samples just as Ga concentration is fixed 2 at% for all CdS thin films. It is observed from the X-ray diffraction data that all the samples exhibit hexagonal structure and an increase level of K in Ga-doped CdS samples causes a degradation in the crystal quality. Energy-dispersive X-ray spectroscopy measurements illustrate that the best stoichiometric film is acquired when K content is 2 at% in Ga-doped CdS films. Optical transmission curves demonstrate that CdS:Ga thin films exhibit the best optical transparency in the visible range for 4 at% K content compared to other specimens. A widening in the optical bandgap is unveiled after K-dopings. It is obtained that maximum band gap value is found as 2.45 eV for 3 at%, 4 at% and 5 at%. K -dopings while Ga-doped CdS thin films display the band gap value of 2.43 eV. From photoluminescence measurements, the most intensified peak is observed in the deep level emission after incorporation of the 4 at% K atoms. As for electrical characterization results, the resistivity reduces and the carrier density improves with the increase of K concentration from 1 at% to 4 at%. Based on all the data, it can be deduced that 4 at% K-doped CdS:Ga thin films show the best optical and electrical behavior, which can be utilized for solar cell devices. | en_US |
dc.description.sponsorship | Adana Science and Technology University [MUHDBF.MLZM.2015-16] | en_US |
dc.description.sponsorship | All the authors are thankful to Adana Science and Technology University for its financial support under the project number of MUHDBF.MLZM.2015-16. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | Elsevier Sci Ltd | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | CdS | en_US |
dc.subject | (Ga-K) co-doping | en_US |
dc.subject | Optical properties | en_US |
dc.subject | Electrical properties | en_US |
dc.title | Enhancement in the optical and electrical properties of CdS thin films through Ga and K co-doping | en_US |
dc.type | article | en_US |
dc.contributor.department | RTEÜ, Fen - Edebiyat Fakültesi, Fizik Bölümü | en_US |
dc.contributor.institutionauthor | Tomakin, Murat | |
dc.identifier.doi | 10.1016/j.mssp.2016.12.016 | |
dc.identifier.volume | 60 | en_US |
dc.identifier.startpage | 45 | en_US |
dc.identifier.endpage | 52 | en_US |
dc.relation.journal | Materials Science in Semiconductor Processing | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |